Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/29691
Title: Preparation and piezoelectric properties of sol-gel-derived Nb-doped PZT films for MEMS applications
Authors: Kwok, KW 
Kwok, KP
Tsang, RCW
Chan, HLW 
Choy, CL 
Keywords: Nb dopant
Piezoelectric properties
PZT thin films
Issue Date: 2006
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2006, v. 80, no. 1, p. 155-162 How to cite?
Journal: Integrated ferroelectrics 
Abstract: Sol-gel-derived niobium (Nb)-doped lead zirconate titanate (PZT) films have been deposited on silicon substrates with a lead titanate seeding layer by the multiple-spin-coating technique. The doping level of Nb ranges from 0 to 2 mol%. With the seeding layer, the PZT films can crystallize well into the perovskite phase at a low temperature of 550°C for 2 h. The films are dense and have good dielectric and piezoelectric properties. Effective longitudinal and transverse piezoelectric coefficients (d 33,c and e 31,c ) of the films have been measured. Our results reveal that the Nb dopant effects on the PZT films are very similar to the experimentally-known effects on the corresponding bulk ceramics, i.e. enhancing both the longitudinal and transverse piezoelectric properties. For the PZT film doped with 1 mol% Nb, the observed values of d 33,c and e 31,c are 74 pm/V and 12.8 C/m 2 , respectively.
URI: http://hdl.handle.net/10397/29691
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580600657377
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