Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/29308
Title: Memory characteristics and the tunneling mechanism of Au nanocrystals embedded in a DyScO3 high-k gate dielectric layer
Authors: Chan, KC
Lee, PF
Li, DF
Dai, JY 
Issue Date: 2011
Publisher: IOP Publishing Ltd
Source: Semiconductor science and technology, 2011, v. 26, no. 2, 25015 How to cite?
Journal: Semiconductor Science and Technology 
Abstract: DyScO3 thin films grown by pulsed-laser deposition have been attempted to serve as a dielectric layer in the Au nanocrystal (NC) floating gate memory structure of DyScO3/Au NCs/DyScO3 trilayers on Si. The charging effect of pulsed-laser deposited Au NCs embedded inside the DyScO3 thin films is manifested by the significant threshold voltage shift of 4.5 V, i.e. of memory window. The tunneling mechanism in this floating gate memory structure is also studied. These results may provide an alternative approach for utilizing DyScO3 in the floating gate memory structure.
URI: http://hdl.handle.net/10397/29308
DOI: 10.1088/0268-1242/26/2/025015
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