Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/29238
Title: Epitaxial PLT thin films prepared by a sol-gel process
Authors: Zhou, QF
Chan, HL 
Zhang, QQ
Choy, CL 
Keywords: Epitaxy
Sol-gel
Thin film
Issue Date: 1999
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 1999, v. 232, no. 1-4, p. 53-58 How to cite?
Journal: Ferroelectrics 
Abstract: Lead lanthanum titanate (PLT) ferroelectric thin films with (001) orientation have been epitaxially grown on La0.5Sr0.5CoO3(LSCO)/LaALO3(LAO) substrates by a sol-gel process followed by rapid annealing at 650°C. PLT (111) films have also been successfully prepared on Pt(111)/Ti/SiO2/Si substrates. 2θ scans, φ scans and rocking curves obtained in x-ray diffraction measurements reveal the high epitaxy of these films. The PLT (111) films exhibit good dielectric and ferroelectric properties and may be useful as infrared sensors.
URI: http://hdl.handle.net/10397/29238
ISSN: 0015-0193
EISSN: 1563-5112
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