Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/29080
Title: Microstructure, electrical properties of CeO2-doped (K 0.5Na0.5)NbO3 lead-free piezoelectric ceramics
Authors: Gao, D
Kwok, KW 
Lin, D
Chan, HLW 
Issue Date: 2009
Publisher: Springer
Source: Journal of materials science, 2009, v. 44, no. 10, p. 2466-2470 How to cite?
Journal: Journal of materials science 
Abstract: CeO2-doped K0.5Na0.5NbO3 lead-free piezoelectric ceramics have been fabricated by a conventional ceramic fabrication technique. The ceramics retain the orthorhombic perovskite structure at low doping levels (<1 mol.%). Our results also demonstrate that the Ce-doping can suppress the grain growth, promote the densification, decrease the ferroelectric-paraelectric phase transition temperature (T C), and improve the dielectric and piezoelectric properties. For the ceramic doped with 0.75 mol.% CeO2, the dielectric and piezoelectric properties become optimum: piezoelectric coefficient d 33 = 130 pC/N, planar electromechanical coupling coefficient k p = 0.38, relative permittivity εr = 820, and loss tangent tanδ = 3%.
URI: http://hdl.handle.net/10397/29080
ISSN: 0022-2461
EISSN: 1573-4803
DOI: 10.1007/s10853-009-3314-1
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