Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28964
Title: Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects
Authors: Peng, CX
Weng, HM
Zhu, CF
Ye, BJ
Zhou, XY
Han, RD
Fong, WK
Surya, C 
Keywords: Defects
GaN polarity
Strain
Issue Date: 2007
Publisher: Elsevier Science Bv
Source: Physica b : condensed matter, 2007, v. 391, no. 1, p. 6-11 How to cite?
Journal: Physica B: Condensed Matter 
Abstract: The dependence of strain relaxation and consequent generation defects on Gallium nitride (GaN) polarity and intermediate-temperature buffer layer (ITBL) has been observed by Raman scattering, photoluminescence (PL) and monoenergetic positron beam techniques. Raman scattering studies have indicated that tensile stress prefers and compress stress is present in N-polar and Ga-polar films, respectively. Furthermore, ITBL relaxes strains in Ga-polar GaN films more effectively than in N-polar GaN films. PL results show that peak shifts due to the effect of polarity and ITBL. Depth resolved defect-sensitive S parameter measurements, using monoenergetic positron beam, exhibit larger S parameter and shorter positron effective diffusion length in N-polar GaN samples than those in Ga-polar films. When ITBL is added, S parameter decreases and effective diffusion length increases in both groups. Hall mobility and carrier concentration measurement manifest a reduction of dislocation line and electrons trap centers such as V Ga or Ga vacancy clusters.
URI: http://hdl.handle.net/10397/28964
DOI: 10.1016/j.physb.2006.05.431
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

6
Last Week
0
Last month
0
Citations as of Feb 25, 2018

WEB OF SCIENCETM
Citations

6
Last Week
0
Last month
0
Citations as of Feb 23, 2018

Page view(s)

43
Last Week
0
Last month
Citations as of Feb 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.