Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28645
Title: Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) using pulsed laser deposition
Authors: Wang, DY
Yun, P
Wang, Y 
Chan, HLW 
Choy, CL 
Keywords: BZT
PLD
Tunability
X-ray diffraction
Issue Date: 2009
Publisher: Elsevier
Source: Thin solid films, 2009, v. 517, no. 6, p. 2092-2098 How to cite?
Journal: Thin solid films 
Abstract: Epitaxial Ba(Zr0.3Ti0.7)O3 thin films were grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) single-crystal substrates by pulsed laser deposition at 700 °C in different oxygen partial pressures ranging from 6.7 Pa to 40.0 Pa. A strong correlation is observed between the structure and dielectric properties for the Ba(Zr0.3Ti0.7)O3 thin films. The tetragonal distortion (ratio of in-plane and out-of-plane lattice parameter, a/c) of the films depends on the oxygen partial pressures. a/c varies from 0.989 at 6.7 Pa to 1.010 at 40.0 Pa, indicating the in-plain strain changes from compressive to tensile. The in-plain strain (either compressive or tensile) shifts the Curie temperature of the Ba(Zr0.3Ti0.7)O3 thin films dramatically. Surface morphology and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films have a strong dependence of the oxygen partial pressure. The film grown 26.7 Pa, which corresponds to a moderate in-plain tensile strain and a Curie temperature of ~ 30 °C, shows the largest relative permittivity, tunability and the best figure of merit in a broad frequency range (1 kHz-500 MHz), which may be a promising candidate for room-temperature microwave device applications.
URI: http://hdl.handle.net/10397/28645
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2008.10.029
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