Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28432
Title: High precision current memory cell for second generation switched-current circuits
Authors: Zeng, X
Tse, CK 
Tang, PS
Keywords: Channel-lengh modulation
Charge-injection cancellation
Clock-feedthrough cancellation
Second-generation SI circuits
Switched-current circuits
Issue Date: 1997
Source: Chinese journal of electronics, 1997, v. 6, no. 3, p. 98-100 How to cite?
Journal: Chinese Journal of Electronics 
Abstract: In second-generation switched-current circuits, the effects of charge injection (or clock-feedthrough) and channel length modulation are the two major sources which seriously limit the accuracy of the basic current memroy cell. In this paper, a new technique which can completely cancell the charge-injection error is proposed. Using this technique and the cascode structure, a high precision memory cell is constructed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration.
URI: http://hdl.handle.net/10397/28432
ISSN: 1022-4653
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