Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28370
Title: One-stage erbium ASE source with 80 nm bandwidth and low ripples
Authors: Huang, WC
Wai, PKA 
Tam, HY 
Dong, XY
Ming, H
Xie, JP
Issue Date: 2002
Publisher: Institution of Engineering and Technology
Source: Electronics letters, 2002, v. 38, no. 17, p. 956-957 How to cite?
Journal: Electronics letters 
Abstract: A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.
URI: http://hdl.handle.net/10397/28370
ISSN: 0013-5194
EISSN: 1350-911X
DOI: 10.1049/el:20020689
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