Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28206
Title: Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions
Authors: Wei, XH
Huang, W
Yang, ZB
Hao, JH 
Issue Date: 2011
Source: Scripta materialia, 2011, v. 65, no. 4, p. 323-326
Abstract: Oxygen-deficient SrTiO 3-δ thin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO 3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.
Keywords: Heterojunctions
III-V semiconductor
Interface
Titanate oxides
Publisher: Pergamon Press
Journal: Scripta materialia 
ISSN: 1359-6462
EISSN: 1872-8456
DOI: 10.1016/j.scriptamat.2011.04.035
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

14
Last Week
0
Last month
1
Citations as of Sep 4, 2020

WEB OF SCIENCETM
Citations

14
Last Week
0
Last month
1
Citations as of Aug 15, 2020

Page view(s)

140
Last Week
0
Last month
Citations as of Sep 16, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.