Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28206
Title: Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions
Authors: Wei, XH
Huang, W
Yang, ZB
Hao, JH 
Keywords: Heterojunctions
III-V semiconductor
Interface
Titanate oxides
Issue Date: 2011
Publisher: Pergamon-Elsevier Science Ltd
Source: Scripta materialia, 2011, v. 65, no. 4, p. 323-326 How to cite?
Journal: Scripta Materialia 
Abstract: Oxygen-deficient SrTiO 3-δ thin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO 3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.
URI: http://hdl.handle.net/10397/28206
DOI: 10.1016/j.scriptamat.2011.04.035
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