Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28073
Title: Pentacene organic thin-film transistor with HfYO gate dielectric made on adhesive vacuum tape
Authors: Han, CY
Leung, CH
Lai, PT
Tang, WM 
Issue Date: 2015
Publisher: Institution of Engineering and Technology
Source: Electronics letters, 2015, v. 51, no. 8, p. 644-646 How to cite?
Journal: Electronics Letters 
Abstract: Pentacene organic thin-film transistor (OTFT) with HfYO as gate dielectric has been fabricated at room temperature on adhesive flexible vacuum tape and shows high performance. The threshold voltage is as low as -1.77 V due to the high-κ gate dielectric employed. A small sub-threshold swing (SS) of 0.145 V/dec indicates good interface between the gate dielectric and pentacene film. Atomic force microscopy (AFM) reveals that large pentacene gains form on the HfYO gate dielectric, leading to a high carrier mobility of 0.236 cm2V-1s-1. These good results suggest that the adhesive vacuum tape can be used as the substrate for adhesive flexible OTFT, and HfYO is a promising gate dielectric for high-performance pentacene OTFT.
URI: http://hdl.handle.net/10397/28073
ISSN: 0013-5194
DOI: 10.1049/el.2015.0118
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

1
Last Week
0
Last month
0
Citations as of Jun 22, 2017

Page view(s)

34
Last Week
0
Last month
Checked on Jun 25, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.