Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28002
Title: Low temperature processing of a large grain polycrystalline silicon thin film on soda-lime glass
Authors: Wang, K
Wong, KH
Issue Date: 2011
Publisher: IOP Publishing Ltd
Source: Semiconductor science and technology, 2011, v. 26, no. 9, 95031 How to cite?
Journal: Semiconductor Science and Technology 
Abstract: We have demonstrated that a polycrystalline silicon thin film can be fabricated in situ on soda-lime glass at 450 °C by an Al-induced crystallization method using electron beam evaporation. The catalytic Al is found to diffuse to the top of the crystallized Si layer and can be easily etched away by a mixture of acids. This low temperature Si crystallization process is well explained by thermodynamic consideration. Subsequent annealing at the same temperature (450 °C) for 6 h improves the crystallinity of the film and enlarges the average grain size to over 5 νm. There are no observable impurity phases. The poly-Si thin films are (1 1 1) oriented and all the grains are well aligned. A defect-free and excellent crystalline structure has been revealed by transmission electron microscopy. The measured resistivity, carrier concentration and charge mobility of these as-prepared poly-Si thin films indicate that our present low temperature processing technique has great advantage and prospect for the photonics industry.
URI: http://hdl.handle.net/10397/28002
DOI: 10.1088/0268-1242/26/9/095031
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