Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/27914
Title: Structural and electrical characteristics of highly textured oxidation-free Ru thin films by DC magnetron sputtering
Authors: Tian, HY
Wang, Y 
Chan, HLW 
Choy, CL 
No, KS
Keywords: DC sputtering
Resistivity
Textured Ru films
Issue Date: 2005
Publisher: Elsevier
Source: Journal of alloys and compounds, 2005, v. 392, no. 1-2, p. 231-236 How to cite?
Journal: Journal of alloys and compounds 
Abstract: Textured Ru thin films (∼120 nm) were deposited on Si and rolling-assisted biaxially textured Ni substrates by a DC magnetron sputtering technique with a two-step process. The biaxially textured pure Ni substrates with a thickness of 80 μm were fabricated by rolling followed by recrystallization. The alignments and the crystallinity of Ru films were analyzed by pole figures, as well as X-ray diffraction (θ - 2θ) analysis. The highly (0 0 2) oriented Ru films were fabricated on Si substrates, and four-fold symmetric Ru films on Ni(2 0 0) substrates. The resistivities of pure metallic Ru films were 20-80 μΩ cm for Ru on Si and 16-40 μΩ cm on Ni, respectively, which is sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in capacitor dielectrics.
URI: http://hdl.handle.net/10397/27914
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2004.09.041
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