Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/27539
Title: BaPbO3 conductive coating layers on platinized Si substrate for the growth of PbZr1-xTixO3 thin films
Authors: Yu, YJ
Chan, HLW 
Wang, FP
Zhao, LC
Keywords: BPO buffer layers
Ferroelectric
PZT thin films
Sol-gel process
Synthesis
Issue Date: 2004
Publisher: North-Holland
Source: Materials letters, 2004, v. 58, no. 12-13, p. 1885-1888 How to cite?
Journal: Materials letters 
Abstract: Barium metaplumbate (BaPbO3, BPO) thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method and a rapid thermal annealing (RTA) process. X-ray diffraction (XRD) was used to characterize the crystalline structure of the resultant films. It was shown that the formation of perovskite BPO greatly depends on the lead concentration and the final annealing temperature. In terms of the semi-quantitative energy dispersion spectrum (EDS) analysis, the ratio of Pb/Ba in the BPO ceramic films increases as the final heating temperature increases. Using BPO as buffer layers, PZT thin films with a pure perovskite structure were grown at a very low temperature of 500 °C by the sol-gel technique and the RTA process. The remanent polarization of Pt/PZT/BPO/Pt ferroelectric capacitors is about 17 μC/cm2 at an applied voltage of 3 V.
URI: http://hdl.handle.net/10397/27539
ISSN: 0167-577X
EISSN: 1873-4979
DOI: 10.1016/j.matlet.2003.11.021
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