Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/27408
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dc.contributorDepartment of Applied Physics-
dc.creatorShi, Y-
dc.creatorHuang, JK-
dc.creatorJin, L-
dc.creatorHsu, YT-
dc.creatorYu, SF-
dc.creatorLi, LJ-
dc.creatorYang, HY-
dc.date.accessioned2015-04-29T07:26:26Z-
dc.date.available2015-04-29T07:26:26Z-
dc.identifier.urihttp://hdl.handle.net/10397/27408-
dc.language.isoenen_US
dc.publisherNature Publishing Groupen_US
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/en_US
dc.rightsThe following publication Shi, Y., Huang, J., Jin, L. et al. Selective Decoration of Au Nanoparticles on Monolayer MoS2 Single Crystals. Sci Rep 3, 1839 (2013). is available at https://dx.doi.org/10.1038/srep01839en_US
dc.titleSelective decoration of au nanoparticles on monolayer MoS2 single crystalsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume3-
dc.identifier.doi10.1038/srep01839-
dcterms.abstractWe report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS2 layers. The Au-MoS2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the defect density in MoS2 layers. Field effect transistors were directly fabricated by placing ion gel gate dielectrics on Au-decorated MoS2 layers without the need to transfer these MoS2 layers to SiO2/Si substrates for bottom gate devices. The ion gel method allows probing the intrinsic electrical properties of the as-grown and Au-decorated MoS2 layers. This study shows that Au NPs impose remarkable p-doping effects to the MoS2 transistors without degrading their electrical characteristics.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationScientific reports, 14 2013, v. 3, no. , p. 1-7-
dcterms.isPartOfScientific reports-
dcterms.issued2013-
dc.identifier.isiWOS:000318840800004-
dc.identifier.pmid23670611-
dc.identifier.eissn2045-2322-
dc.identifier.rosgroupidr67621-
dc.description.ros2012-2013 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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