Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/27165
Title: Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers
Authors: Leung, BH
Fong, WK
Zhu, CF
Surya, C 
Keywords: Gallium nitride
Intermediate-temperature buffer layer
Low-frequency noise
Issue Date: 2001
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2001, v. 48, no. 10, p. 2400-2404 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.
URI: http://hdl.handle.net/10397/27165
ISSN: 0018-9383 (print)
1557-9646 (online)
DOI: 10.1109/16.954483
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