Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/27082
Title: Dielectric tunability and magnetoelectric coupling in LuFe2O4 epitaxial thin film deposited by pulsed-laser deposition
Authors: Zeng, M
Liu, J
Qin, YB
Yang, HX
Li, JQ
Dai, JY 
Keywords: Magnetoelectric coupling
Dielectric tunability
Charge-Ordering
Multiferroics
Pulsed-laser deposition
X-ray diffraction
Lutetium ferrite
Issue Date: 2012
Publisher: Elsevier
Source: Thin solid films, 2012, v. 520, no. 20, p. 6446-6449 How to cite?
Journal: Thin solid films 
Abstract: C-axis orientated LuFe2O4 thin films on (001) sapphire substrates are epitaxially deposited by pulsed-laser deposition. Temperature-dependent resistance characterization reveals the ferrimagnetic transition at 237K and charge-ordering transition at 340K in the film. Importantly, the dielectric constant of the film can be significantly changed by both electric and magnetic fields. The dielectric tunability reaches 35% when an electric field of 5V is applied, while this value reduces to 20% and 15%, respectively, when a magnetic field of 0.83T is applied perpendicular and parallel to the film normal direction. This suggests a magnetically controlled dielectric tunability and strong magnetoelectric coupling, and is therefore promising for tunable device applications in film form.
URI: http://hdl.handle.net/10397/27082
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2012.06.058
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

4
Last Week
0
Last month
Citations as of Apr 10, 2016

WEB OF SCIENCETM
Citations

6
Last Week
0
Last month
0
Citations as of Aug 13, 2017

Page view(s)

35
Last Week
0
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.