Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26761
Title: Epitaxial growth and dielectric properties of functionally graded (Ba1-xSrx) TiO3 thin films with stoichimetric variation
Authors: Zhu, X
Chan, HLW 
Choy, CL 
Wong, KH
Issue Date: 2002
Source: Journal of vacuum science and technology A : Vacuum, surfaces and films, 2002, v. 20, no. 5, p. 1796-1801 How to cite?
Journal: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 
Abstract: Pulsed laser deposition was used to grow functionally graded (Ba1-xSrx)TiO3 (BST) thin films with stoichimetric variation on MgO (100) single-crystal substrate. The surface roughness of the up-graded film was larger than that of the down-graded film. The compositional gradiations in the film were confirmed by rutherford backscattering spectroscopy. Results showed that the dielectric constant and dielectric loss at 10 kHz were 532 and 0.010 for the up-graded films, and 715 and 0.0103 for the down-graded films.
URI: http://hdl.handle.net/10397/26761
ISSN: 0734-2101
DOI: 10.1116/1.1503787
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