Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26716
Title: Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature
Authors: Pattanasattayavong, P
Yaacobi-Gross, N
Zhao, K
Ngongang Ndjawa, GO
Li, J
Yan, F 
O'Regan, BC
Amassian, A
Anthopoulos, TD
Keywords: Copper thiocyanate
Solution processing
Transparent transistors
Wide-bandgap p-type semiconductors
Issue Date: 2013
Publisher: Wiley-V C H Verlag Gmbh
Source: Advanced materials, 2013, v. 25, no. 10, p. 1504-1509 How to cite?
Journal: Advanced Materials 
Abstract: The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.
URI: http://hdl.handle.net/10397/26716
ISSN: 0935-9648
DOI: 10.1002/adma.201202758
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