Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26700
Title: Ferroelectric properties of Pb(Zr,Ti)O3 thin films integrated at low temperatures on LaNiO3-buffered glass
Authors: Wang, Y 
Chan, HLW 
Choy, CL 
Keywords: Ferroelectric
Glass
LaNiO3
Pb(Zr,Ti)O3
Thin film
Issue Date: 2003
Publisher: Institute of Pure and Applied Physics
Source: Japanese journal of applied physics. Part 1, Regular papers and short notes 2003, v. 42, no. 11, p. 6988-6989 How to cite?
Journal: Japanese journal of applied physics. Part 1, Regular papers and short notes 
Abstract: We report on the fabrication and characterization of Pb(Zr,Ti)O 3 (PZT) thin films integrated on glass using lanthanum nickel oxide (LaNiO3) template layer/electrodes. The electrodes were deposited by means of sputtering and PZT thin film prepared by sol-gel and spin-coating techniques. The whole ferroelectric stack was treated by single annealing at 480°C for 30 min. X-ray diffraction revealed PZT has a pure perovskite phase with random orientation. The ferroelectric tests indicated the film exhibits excellent ferroelectric properties (remnant polarization up to 30 μm/cm2).
URI: http://hdl.handle.net/10397/26700
ISSN: 0021-4922
EISSN: 1347-4065
DOI: 10.1143/JJAP.42.6988
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