Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26636
Title: Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate insulator
Authors: Li, J
Sun, Z
Yan, F 
Keywords: high-k gate dielectrics
organic thin film transistors
relaxor ferroelectric polymers
Issue Date: 2012
Publisher: Wiley-VCH
Source: Advanced materials, 2012, v. 24, no. 1, p. 88-93 How to cite?
Journal: Advanced materials 
Abstract: A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene- chlorofloroethylene) exhibits a high relative dielectric constant (k) (60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm 2 V -1 s -1 at an operating voltage of 3 V.
URI: http://hdl.handle.net/10397/26636
ISSN: 0935-9648
EISSN: 1521-4095
DOI: 10.1002/adma.201103542
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