Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26544
Title: Room-temperature ferromagnetism of Cu-doped ZnO films deposited by helicon magnetron sputtering
Authors: Ran, FY
Imaoka, M
Tanemura, M
Hayashi, Y
Herng, TS
Lau, SP 
Issue Date: 2009
Publisher: Wiley-V C H Verlag Gmbh
Source: Physica status solidi (b) basic research, 2009, v. 246, no. 6, p. 1243-1247 How to cite?
Journal: Physica Status Solidi (B) Basic Research 
Abstract: Wurtzite structure ZnO films doped with 0.5 and 1.7 at% Cu were deposited by helicon magnetron sputtering. The prepared films exhibited room-temperature (RT) ferromagnetism (FM). Maximum RT saturation magnetization of 2 emu/cm 3 (~ 0.3 ?gB/Cu) was observed for ZnO film with 1.7 at% Cu. Cu ions were in a bivalent state as identified by X-ray photoelectron spectroscopy (XPS). In photoluminescence spectra, the green emission peak increased and redshifted due to the incorporation of Cu or defects induced by Cu incorporation. Since Cu and Cu-related oxides are not RT ferromagnetic, and no trace of ferromagnetic contamination was detected in XPS results, the observed FM is considered to be an intrinsic property of Cu-doped ZnO films. The FM was thought to originate from defect-related mechanisms.
URI: http://hdl.handle.net/10397/26544
ISSN: 0370-1972
DOI: 10.1002/pssb.200945091
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