Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2652
Title: Resistive switching behaviour in oxide thin films and devices
Authors: Lau, Hon-kit
Keywords: Hong Kong Polytechnic University -- Dissertations
Thin film transistors
Thin films -- Thermal properties
Issue Date: 2010
Publisher: The Hong Kong Polytechnic University
Abstract: Resistive switching effect induced by voltage pulses has been praised as one of the potential candidates for the next-generation non-volatile memories. Resistive random access memory (RRAM) based on transition-metal perovskite oxides has demonstrated a large resistance change upon the application of small and short voltage pulses with different polarities. Some of the advantages of the effect include its fast response, low power consumption, high information packing density and non-volatile characteristics. However, the resistive switching mechanism is still under debate, and the devices have to be optimized before they can be used commercially. The objective of this work is to study the properties of resistive switching effect based on perovskite manganites including Pr₀.₇Ca₀.₃ MnO₃ (PCMO) and La₀.₇Sr₀.₃MnO₃ (LSMO), and to investigate the resistive switching mechanism. The research work includes the fabrication and subsequent characterization of PCMO and LSMO oxide thin film-based devices. The performance of the switching devices, including pulse magnitude and pulse width dependences of resistance ratio, data retention ability, and their durability towards repeated switching, have been studied. Moreover, the dependence of the switching effect on metal electrodes has been studied. For resistive switching mechanism analysis, thermal measurements including micro-thermocouples and thermoreflectance imaging techniques were used. By studying the temperature variation in the devices under different voltage biases, AlOₓ was found to exist at the Al/PCMO interface, and it is proposed that electrochemical reaction of AlOₓ is contributing to the resistive switching effect in Al-based resistive switching devices.
Description: xi, 123 leaves : ill. (some col.) ; 30 cm.
PolyU Library Call No.: [THS] LG51 .H577M AP 2010 Lau
URI: http://hdl.handle.net/10397/2652
Rights: All rights reserved.
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