Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2637
Title: Structural and dielectric properties of epitaxial perovskite titanate thin films
Authors: Wu, Zhenping
Keywords: Hong Kong Polytechnic University -- Dissertations
Ferroelectric thin films
Titanium dioxide
Dielectric films
Issue Date: 2009
Publisher: The Hong Kong Polytechnic University
Abstract: In recent years, tunable and affordable high-frequency microwave devices have been widely studied for the next generation of communication and radar system. Perovskite titanates such as SrTiO₃ have relatively large and field-dependent dielectric constant and low loss, which are considered to be one of the most promising candidates for such application. Structural and dielectric properties of perovskite titanates are important in comprising those materials into devices. In the present thesis, the multilayer of SrTiO₃/YBa₂Cu₃Oy was deposited using laser molecular beam epitaxy technique. The growth mode of the films was investigated using in-situ reflection high energy electron diffraction. The crystal structure in SrTiO₃/YBa₂Cu₃Oy multilayer was measured by X-ray diffraction measurement. The morphology was determined with atomic force microscope. The Raman scattering measurement is employed to study the lattice dynamic properties of the heterostructure in the temperature range from 10 to 300 K. The effects of temperature and frequency on the dielectric properties of SrTiO₃ thin films were evaluated. Secondly, epitaxial SrTiO₃ films were grown on GaAs (001) substrates without any buffer layers using laser molecular beam epitaxy technique. The reflection high energy electron diffraction observations have revealed that a layer-by-layer growth of SrTiO₃ was achieved by optimizing deposition process. The crystalline orientation of the as-grown SrTiO₃ (001) films rotates 45° in plane with respect to the GaAs (001) substrates. Atomic force microscope studies show that these films possess atomically flat surfaces. The SrTiO₃/GaAs interface with a sharp interface was investigated by transmission electron microscopy. The dielectric properties of the heterostructure were also investigated. Our results have clearly demonstrated the practicality of integrating perovskite oxide thin films with GaAs substrates. Thirdly, Ferroelectric BaTiO₃ thin films were epitaxially grown on (001) GaAs substrate using SrTiO₃ as a buffer layer by laser molecular beam epitaxy. The interface structure was analyzed by means of reflection high energy electron diffraction and transmission electron microscopy. The perovskite SrTiO₃ buffer layer presents a body centered cubic structure by forming 10nm-thick interfacial layer, with the [100]SrTiO₃//[110]GaAs in-plane relationship. Thereupon, a highly c-oriented BaTiO₃ was grown on SrTiOs/GaAs in a layer by layer mode with a sharp interface and a significant reduction of mismatch-related defects. The BaTiO₃ (150nm)/SrTiO₃(10nm)/GaAs heterostructure demonstrates ferroelectric hysteresis behavior with a remnant polarization of 2.5μC/cm² and a small leakage current density of 2.9x10⁻⁷ A/cm² at 200 kV. The observation shows that it is feasible for integrated device applications by introducing SrTiO₃buffer layer at the interface between film and GaAs.
Description: xv, 111 leaves : ill. ; 30 cm.
PolyU Library Call No.: [THS] LG51 .H577M AP 2009 Wu
URI: http://hdl.handle.net/10397/2637
Rights: All rights reserved.
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