Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26191
Title: Introduction to graphene electronics - a new era of digital transistors and devices
Authors: Yung, KC 
Wu, WM
Pierpoint, MP
Kusmartsev, FV
Keywords: Carbon nanotube
Graphene
High-frequency amplifier
Nanoribbon
Transistor
Tunnelling
Issue Date: 2013
Source: Contemporary physics, 2013, v. 54, no. 5, p. 233-251 How to cite?
Journal: Contemporary Physics 
Abstract: The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nanoribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunnelling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.
URI: http://hdl.handle.net/10397/26191
ISSN: 0010-7514
DOI: 10.1080/00107514.2013.833701
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