Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26054
Title: Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures
Authors: Chang, Y
Tong, KY
Surya, C 
Issue Date: 2005
Source: Semiconductor science and technology, 2005, v. 20, no. 2, p. 188-192 How to cite?
Journal: Semiconductor Science and Technology 
Abstract: The de drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrödinger's and Poisson's equations. The effects of temperature on the polarization and conduction band offset in the heterojunction have been considered. Our simulation results of the drain current at high temperature agree very well with reported experimental data. There is a significant reduction of saturation drain current when the temperature increases, and it is concluded that this is caused by both the decrease of saturation carrier velocity and two-dimensional electron density in the HEMT.
URI: http://hdl.handle.net/10397/26054
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/2/016
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