Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/26011
Title: One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature
Authors: Wang, XY
Zhai, HZ
Cao, CB
Cai, HN
Wang, Y 
Chan, HLW 
Issue Date: 2009
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry, 2009, v. 19, no. 19, p. 2958-2962 How to cite?
Journal: Journal of materials chemistry 
Abstract: SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.
URI: http://hdl.handle.net/10397/26011
ISSN: 0959-9428
EISSN: 1364-5501
DOI: 10.1039/b820954e
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