Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25945
Title: Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation
Authors: Lui, HF
Leung, KK
Fong, WK
Surya, C 
Keywords: Hall mobility
III-V semiconductors
X-ray diffraction
Carrier density
Copper compounds
Electric properties
Epitaxial growth
Evaporation
Gallium compounds
Optical properties
Sapphire
Substrates
Thin films
Tin compounds
Transmission electron microscopy
Wide band gap semiconductors
Zinc compounds
Issue Date: 2010
Publisher: IEEE
Source: 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Honolulu, HI, p. 001977-001981 How to cite?
Abstract: We report on the growth of high quality Cu2ZnSnS4 (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.
URI: http://hdl.handle.net/10397/25945
ISBN: 978-1-4244-5890-5
ISSN: 0160-8371
DOI: 10.1109/PVSC.2010.5616592
Appears in Collections:Conference Paper

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

3
Citations as of Oct 16, 2017

WEB OF SCIENCETM
Citations

1
Last Week
0
Last month
0
Citations as of Oct 17, 2017

Page view(s)

34
Last Week
1
Last month
Checked on Oct 22, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.