Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25847
Title: Highly (100)-oriented Eu-doped PZT thin films on sol-gel derived (100)-textured LaNiO3/Si substrates
Authors: Yu, YJ
Wang, FP
Chan, HLW 
Zhao, LC
Issue Date: 2004
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2004, v. 78, no. 5, p. 733-736 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: (100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a rapid thermal process at temperatures ranging from 650°C to 800°C. The films produced at 700°C had a resistivity of 1.79mΩm and could be used as bottom electrodes in the fabrication of ferroelectric capacitors on Si. Subsequently, a sol-gel derived Eu-doped Pb(Zr0.52,Ti0.48)O3 (PEZT) thin film with a thickness of 130 nm prepared on the LNO electrode was found to have a (100)-oriented texture. Possible reasons for the high degree of (100) orientation in PEZT thin films are given. Good ferroelectric performance was obtained for Au/PEZT/LNO capacitors. The remnant polarization (2P r) was found to be 22 μC/cm2 at a coercive electric field (Ec) of 134 kV/cm. After 1011 polarization reversals, Pr decreased by only 15%.
URI: http://hdl.handle.net/10397/25847
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-002-1999-y
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