Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25775
Title: Composition control and electrical properties of PMN-PT thin films around the morphotropic boundary
Authors: Wang, J
Wong, KH
Chan, HLW 
Choy, CL 
Issue Date: 2004
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2004, v. 79, no. 3, p. 551-556 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: We have successfully grown (1-x)Pb(Mg1/3-Nb1/3)O 3-xPbTiO3 (PMN-PT) thin films with x = 0.3, 0.35 and 0.4 by pulsed laser deposition. X-ray-diffraction studies reveal that the PMN-PT films grown on La0.5Sr0.5CoO3/LaAlO3 substrates form epitaxial heterostructures. Composition control and remedial measures to compensate for the lead and magnesium losses due to re-evaporation are demonstrated. As a common feature, the as-grown PMN-PT thin films exhibit a self-poling behavior. Their dielectric constants measured at room temperature vary from 1500 to 2500, depending on the PMN to PT ratios. The pyroelectric coefficient of the films varies from 160 to 300 μC/m2K. The piezoelectric coefficient d33 is around 27 pm/V in the as-grown 70/30 films. A comparison of these values with the bulk PMN-PT of same compositions implies that the much-reduced piezoelectric properties in the PMN-PT films are primarily due to a substrate-clamping effect.
URI: http://hdl.handle.net/10397/25775
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-003-2355-6
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