Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25368
Title: Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application
Authors: Lam, HK
Dai, JY 
Chan, HLW 
Issue Date: 2004
Source: Journal of crystal growth, 2004, v. 268, no. 1-2, p. 144-148
Abstract: Lithium niobate (LiNbO3) epitaxial films were deposited on (0001) and (112̄0) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3 films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100mTorr) favors a-oriented LiNbO3 film growth while higher oxygen pressure (500mTorr) favors c-oriented growth. A two step film growth process (growth at 500mTorr oxygen pressure for 15s followed by 12min growth at 100mTorr oxygen pressure at 650°C) was developed to deposit surface-flat c-oriented LiNbO3 films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O 3/diamond.
Keywords: Diamond
Lithium niobate
Sapphire
Surface acoustic wave device
Publisher: Elsevier
Journal: Journal of crystal growth 
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.04.111
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