Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25288
Title: Magneto-electric coupling in a multiferroic tunnel junction functioning as a magnetic-field-effect transistor
Authors: Zhou, Y
Woo, CH
Zheng, Y
Keywords: Giant magnetoresistance (GMR)
magnetic-field-effect transistor (MFET)
spintronics devices
Issue Date: 2012
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on nanotechnology, 2012, v. 11, no. 1, 5772935, p. 77-81 How to cite?
Journal: IEEE transactions on nanotechnology 
Abstract: A nanoscaled multilayered composite structure made of a ferroelectric tunnel capacitor attached to a magnetic sensor layer is studied using a Landau-Ginzburg thermodynamic model. The relation between the polarization and the mechanical load induced by the magnetic signal via electrostriction is established. Our results suggest that the spin-flip-induced resistance change of such a structure may reach hundreds of percents to orders of magnitude, which is sufficiently strong to allow its use as a magnetic-field-effect transistor.
URI: http://hdl.handle.net/10397/25288
ISSN: 1536-125X
EISSN: 1941-0085
DOI: 10.1109/TNANO.2011.2157355
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