Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/25255
Title: | Micro-pressure sensors made of indium tin oxide thin films | Authors: | Yeung, KW Ong, CW |
Keywords: | Indium tin oxide Magnetron sputtering Piezoresistive property Pressure sensors |
Issue Date: | 2007 | Publisher: | Elsevier | Source: | Sensors and actuators. A, Physical, 2007, v. 137, no. 1, p. 1-5 How to cite? | Journal: | Sensors and actuators. A, Physical | Abstract: | The microstructure, electrical resistivity and piezoresistive property of magnetron sputtered indium tin oxide (ITO) films were investigated as functions of preparation and post-annealing conditions. Annealing at 400 °C for 30 min resulted in low electrical resistivity ≤6.0 × 10-3 Ω cm and observable piezoresistive coefficient ranging from -4.3 × 10-11 to -7.1 × 10-11 Pa-1. Prototypes of pressure sensors with an annealed ITO film deposited on a 25 μm thick silicon diaphragm were fabricated. With a bias voltage of 1 V, the device gave a voltage response of 12.6 mV when the differential pressure across the diaphragm varied from -6 × 104 to 6 × 104 Pa. | URI: | http://hdl.handle.net/10397/25255 | ISSN: | 0924-4247 | EISSN: | 1873-3069 | DOI: | 10.1016/j.sna.2007.01.012 |
Appears in Collections: | Journal/Magazine Article |
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