Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25255
Title: Micro-pressure sensors made of indium tin oxide thin films
Authors: Yeung, KW
Ong, CW 
Keywords: Indium tin oxide
Magnetron sputtering
Piezoresistive property
Pressure sensors
Issue Date: 2007
Publisher: Elsevier
Source: Sensors and actuators. A, Physical, 2007, v. 137, no. 1, p. 1-5 How to cite?
Journal: Sensors and actuators. A, Physical 
Abstract: The microstructure, electrical resistivity and piezoresistive property of magnetron sputtered indium tin oxide (ITO) films were investigated as functions of preparation and post-annealing conditions. Annealing at 400 °C for 30 min resulted in low electrical resistivity ≤6.0 × 10-3 Ω cm and observable piezoresistive coefficient ranging from -4.3 × 10-11 to -7.1 × 10-11 Pa-1. Prototypes of pressure sensors with an annealed ITO film deposited on a 25 μm thick silicon diaphragm were fabricated. With a bias voltage of 1 V, the device gave a voltage response of 12.6 mV when the differential pressure across the diaphragm varied from -6 × 104 to 6 × 104 Pa.
URI: http://hdl.handle.net/10397/25255
ISSN: 0924-4247
EISSN: 1873-3069
DOI: 10.1016/j.sna.2007.01.012
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