Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25224
Title: Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation
Authors: Song, X
Gao, J
Nie, Y
Gao, T
Sun, J
Ma, D
Li, Q
Chen, Y
Jin, C
Bachmatiuk, A
Rümmeli, MH
Ding, F 
Zhang, Y
Liu, Z
Keywords: Chemical vapor deposition (CVD)
Cu foil
Domain size
Hexagonal boron nitride
Orientation
Issue Date: 2015
Publisher: Tsinghua University Press
Source: Nano research, 2015 How to cite?
Journal: Nano Research 
Abstract: Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 µm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.
URI: http://hdl.handle.net/10397/25224
ISSN: 1998-0124
DOI: 10.1007/s12274-015-0816-9
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