Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2512
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorKe, S-
dc.creatorHuang, H-
dc.date.accessioned2014-12-11T08:27:07Z-
dc.date.available2014-12-11T08:27:07Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/2512-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Ke & H. Huang, J. Appl. Phys. 108, 064104 (2010) and may be found at http://link.aip.org/link/?jap/108/064104en_US
dc.subjectCeramicsen_US
dc.subjectDielectric materialsen_US
dc.subjectDomain boundariesen_US
dc.subjectGrain sizeen_US
dc.titleGiant low frequency dielectric tunability in high-k Ba (Fe₁/₂Nb₁/₂)O₃ceramics at room temperatureen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage6-
dc.identifier.volume108-
dc.identifier.issue6-
dc.identifier.doi10.1063/1.3487472-
dcterms.abstractThe effect of electric field on the dielectric properties of high-k Ba (Fe₁/₂Nb₁/₂)O₃ceramics with different grain sizes is reported. A low frequency giant dielectric tunability (>85%) can be obtained under a bias field as low as 50 V/mm. The results suggest that the giant dielectric tunability originates from extrinsic contributions such as domain boundary and oxygen defect relaxations. These findings provide a clear understanding to the complicated dielectric response in a family of high-k ceramics and a key to the high tunability of nonferroelectrics under low electric fields, which is attractive for potential applications in tunable devices.-
dcterms.bibliographicCitationJournal of applied physics, 15 Sept. 2010, v. 108, no. 6, 064104, p. 1-6-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2010-09-15-
dc.identifier.isiWOS:000282646400110-
dc.identifier.scopus2-s2.0-77957745974-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr54860-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
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