Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/25001
Title: The influence of Y-dopant on the properties of BST films derived from a sol-gel process
Authors: Tian, HY
Luo, WG
Ding, AL
Yin, QR
Chan, HLW 
Keywords: Y-doped BST films
Band gap energy
Dielectric constant
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 264, no. 1, p. 169-174 How to cite?
Journal: Ferroelectrics 
Abstract: The optical and dielectric properties of Y-doped Ba0.7Sr0.3 TiO3 thin films were investigated. The strong correlation was observed between the dopant concentration and materials properties. The optical band gap energy decreases with Y-dopant in BST thin films, whereas there was an increase of the band gap energy as the Y-dopant concentration increases. The dielectric constant decreases when the Y-concentration increases from 1 to 10 mol%.
Description: 3rd Asian Meeting on Ferroelectrics, AMF-3, Hong Kong, 12-15 December 2000
URI: http://hdl.handle.net/10397/25001
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108008565
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