Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/24873
Title: Improving the quality of GaN on Si(111) substrate with a medium-temperature/high-temperature bilayer AlN buffer
Authors: Xiang, P
Liu, M
Yang, Y
Chen, W
He, Z
Leung, KK
Surya, C 
Han, X
Wu, Z
Liu, Y
Zhang, B
Issue Date: 2013
Publisher: Institute of Pure and Applied Physics
Source: Japanese journal of applied physics, 2013, v. 52, no. 8 part 2, 08jb18 How to cite?
Journal: Japanese journal of applied physics 
Abstract: A medium-temperature/high-temperature (MT/HT) bilayer AlN buffer was introduced for GaN grown on Si(111) by metal organic chemical vapor deposition. The properties of the GaN films with a MT/HT bilayer AlN buffer and those with a single-layer HT-AlN buffer were compared and the influence of the growth temperature of the MT-AlN layer was investigated. With a MT-AlN layer grown in the temperature range from 800 to 1000 °C, the crystalline qualities of the subsequent HT-AlN layer and the GaN film were improved. According to the X-ray diffraction results and the transmission electron microscopy images, the dislocation density in GaN film was reduced with a MT/HT bilayer AlN buffer as compared to those with a single-layer HT-AlN buffer. Moreover, photoluminescence and Raman spectra exhibit enhanced optical properties and less tensile stresses of the GaN film. Better surface morphology of GaN was also obtained with a MT/HT bilayer AlN buffer.
URI: http://hdl.handle.net/10397/24873
ISSN: 0021-4922
EISSN: 1347-4065
DOI: 10.7567/JJAP.52.08JB18
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