Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2483
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dc.contributorDepartment of Applied Physics-
dc.contributorDepartment of Mechanical Engineering-
dc.contributorMaterials Research Centre-
dc.creatorLau, HK-
dc.creatorLeung, DCW-
dc.creatorHu, W-
dc.creatorChan, PKL-
dc.date.accessioned2014-12-11T08:26:59Z-
dc.date.available2014-12-11T08:26:59Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/2483-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H.K. Lau al., J. Appl. Phys. 106, 014504 (2009) and may be found at http://link.aip.org/link/?jap/106/014504en_US
dc.subjectAluminiumen_US
dc.subjectCalcium compoundsen_US
dc.subjectElectrodesen_US
dc.subjectInterface structureen_US
dc.subjectNickelen_US
dc.subjectPraseodymium compoundsen_US
dc.subjectSwitchesen_US
dc.subjectThermal analysisen_US
dc.titleInterfacial defects in resistive switching devices probed by thermal analysisen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. W. Leungen_US
dc.description.otherinformationAuthor name used in this publication: W. H. Huen_US
dc.description.otherinformationAuthor name used in this publication: P. K. L. Chanen_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.identifier.volume106-
dc.identifier.issue1-
dc.identifier.doi10.1063/1.3157207-
dcterms.abstractResistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/Pr₀.₇Ca₀.₃MnO₃(PCMO)/Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlO᙮ presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li et al., J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 July 2009, v. 106, no. 1, 014504, p. 1-4-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2009-07-01-
dc.identifier.isiWOS:000268065000120-
dc.identifier.scopus2-s2.0-67650751514-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr40632-
dc.description.ros2008-2009 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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