Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/24655
Title: Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors
Authors: Qi, J
Chen, W
Wang, H
Wang, Y 
Li, L
Chan, HLW 
Keywords: B2O3
BaTiO3 ceramics
PTCR effect
Vapor
Issue Date: 2004
Source: Sensors and actuators, A : Physical, 2004, v. 116, no. 2, p. 215-218 How to cite?
Journal: Sensors and Actuators, A: Physical 
Abstract: The effects of B2O3 vapor on the sintering and the PTCR effect of BaTiO3-based ceramics are investigated in this study. It is revealed that B2O3 vapor can be doped into both pure and Y-doped BaTiO3 ceramics during sintering. B2O 3 vapor not only obviously influences the densification and the grain growth but also increases the grain lattice parameters. The PTCR effect is improved through the doping of B2O3 vapor as the room temperature resistivity is considerably decreased and the resistance jump is greatly increased. With the doping of 1mol% B2O3 vapor, semiconducting Y-BaTiO3 with the room temperature resistivity of 30Ωcm is obtained when the ceramics are sintered at as low as 1150°C; while when the ceramics are sintered at 1350°C with the doping of 0.25mol% B2O3 vapor, the PTCR effect is enhanced by nearly two orders of magnitude and the room temperature resistivity is decreased from 25 to 9Ωcm.
URI: http://hdl.handle.net/10397/24655
ISSN: 0924-4247
DOI: 10.1016/j.sna.2004.03.064
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