Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2454
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dc.contributorDepartment of Applied Physics-
dc.creatorChan, KC-
dc.creatorLee, PF-
dc.creatorDai, J-
dc.date.accessioned2014-12-11T08:29:15Z-
dc.date.available2014-12-11T08:29:15Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/2454-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.C. Chan, P.F. Lee and J.Y. Dai, Appl. Phys. Lett. 95, 113109 (2009) and may be found at http://apl.aip.org/resource/1/applab/v95/i11/p113109_s1en_US
dc.subjectNanocrystalsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSuperconducting materialsen_US
dc.subjectTunnel junctionsen_US
dc.titleMesoscopic phenomena in Au nanocrystal floating gate memory structureen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. C. Chanen_US
dc.description.otherinformationAuthor name used in this publication: P. F. Leeen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume95-
dc.identifier.issue11-
dc.identifier.doi10.1063/1.3229885-
dcterms.abstractA resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 14 Sept., 2009, v. 95, no. 11, 113109, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2009-09-14-
dc.identifier.scopus2-s2.0-70349498820-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr49613-
dc.description.ros2009-2010 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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