Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/24226
Title: Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer
Authors: Ganeev, RA
Lei, DY 
Hutchison, C
Witting, T
Frank, F
Okell, WA
Roschuk, TR
Maier, SA
Tisch, JWG
Marangos, JP
Issue Date: 2012
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2012, p. 1-6 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×10 13 W cm -2) and sample moving velocity (1 mm s -1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.
URI: http://hdl.handle.net/10397/24226
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-012-7430-4
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