Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/24020
Title: Dielectric and ferroelectric properties of in-plane lead lanthanum titanate thin films
Authors: Song, ZT
Chan, HLW 
Choy, CL
Lin, CL
Keywords: Abnormal electrical properties
Buffer layer
Hillock
Issue Date: 2003
Publisher: Elsevier
Source: Microelectronic engineering, 2003, v. 66, no. 1-4, p. 887-890 How to cite?
Journal: Microelectronic engineering 
Abstract: Pb 0.9La 0.1Ti 0.975O 3 (PLT10) thin film was prepared by an MOD process on ZrO 2/Si substrate. The studies showed that the ZrO 2 buffer layer with a thickness of 0.1 μm is not thermal stable and O atoms in O 2 atmosphere could diffuse into Si substrate through grain boundaries to form SiO 2 at the interface between ZrO 2/Si during the heating treatment process of preparing the thin film. It was observed that there were some hillocks in PLT10 surface, which was caused by the expanding of SiO 2, and which then led to rough interface. ZrO 2 can not form effectively dielectric layer, which caused a parasitic capacitance between the PLT film and silicon substrate. The space charges of Si substrate formed pinning centers, which hampered the normal domains switch and leading to abnormal P-E loops.
Description: IUMRS-ICEM 2002, Xi an, 10-14 June 2002
URI: http://hdl.handle.net/10397/24020
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/S0167-9317(02)01016-X
Appears in Collections:Conference Paper

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

10
Last Week
0
Last month
0
Citations as of Sep 22, 2017

WEB OF SCIENCETM
Citations

11
Last Week
0
Last month
0
Citations as of Sep 21, 2017

Page view(s)

48
Last Week
1
Last month
Checked on Sep 17, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.