Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/23825
Title: GaN/ZnO nanorod light emitting diodes with different emission spectra
Authors: Ng, AMC
Xi, YY
Hsu, YF
Djurisic, AB
Chan, WK
Gwo, S
Tam, HL
Cheah, KW
Fong, PWK
Lui, HF
Surya, C 
Issue Date: 2009
Publisher: Institute of Physics Publishing
Source: Nanotechnology, 2009, v. 20, no. 44, 445201 How to cite?
Journal: Nanotechnology 
Abstract: Light emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods.
URI: http://hdl.handle.net/10397/23825
ISSN: 0957-4484
EISSN: 1361-6528
DOI: 10.1088/0957-4484/20/44/445201
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