Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/23475
Title: Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties
Authors: Liu, Y
Lv, S
Li, L
Shang, S 
Keywords: Atom transfer radical polymerization
Carbazole
Memory effect
Polymer brushes
Switching
Issue Date: 2012
Publisher: Elsevier Science Sa
Source: Synthetic metals, 2012, v. 162, no. 13-14, p. 1059-1064 How to cite?
Journal: Synthetic Metals 
Abstract: In this paper, poly(2-(N-carbazolyl)ethyl methacrylate) (PCEM) brushes have been prepared on the indium-tin oxide (ITO) surfaces via surface-initiated atom transfer radical polymerization (ATRP) using a silane coupling agent containing the initiator moiety. Films of PCEM brushes between bottom ITO electrode and Al top electrode are sandwiched to fabricate the ITO-g-PCEM/Al device. The device exhibits two conductivity states and can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at the switching threshold voltages of -1.5 V with the ON/OFF current ratio up to 10 6. The ON state of the device is nonvolatile and can withstand 10 6 pulse read cycles at -0.8 V under ambient conditions. Upon reversing the bias, the ON state cannot be reset to the initial OFF states. The ITO-g-PCEM/Al device behaves as a write-once read-many-times (WORM) memory. Compared with that of the conventional ITO/PCEM/Al device fabricated by spin-coating, the switching voltage is lower in the ITO-g-PCEM/Al memory device.
URI: http://hdl.handle.net/10397/23475
DOI: 10.1016/j.synthmet.2012.05.015
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