Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/23377
Title: Interface strain coupling and its impact on the transport and magnetic properties of LaMnO 3 thin films grown on ferroelectrically active substrates
Authors: Zheng, RK
Wang, Y 
Habermeier, H
Chan, HLW 
Li, XM
Luo, HS
Keywords: Electronic properties
Magnetoresistance
PMN-PT single crystal
Thin film
Issue Date: 2012
Publisher: Elsevier
Source: Journal of alloys and compounds, 2012, v. 519, p. 77-81 How to cite?
Journal: Journal of alloys and compounds 
Abstract: Thin films of LaMnO 3 have been epitaxially grown on 〈0 0 1〉 oriented ferroelectric 0.67Pb(Mg 1/3Nb 2/3)O 3-0.33PbTiO 3 (PMN-PT) single-crystal substrates. The poling of the PMN-PT crystal causes a decrease in the resistance and an increase in the magnetization and magnetoresistance of the LaMnO 3 film. In situ X-ray diffraction measurements revealed that these changes arise from the poling-induced strain in the PMN-PT substrate, which reduces the in-plane tensile strain and the Jahn-Teller (JT) distortion of MnO 6 octahedra of the LaMnO 3 film. Moreover, it was found that the transport properties of LaMnO 3 films are much more sensitive to the poling-induced strain than that of CaMnO 3 films for which there is no JT distortion, implying that the electron-lattice coupling is one of the most important ingredients in understanding the strain effect in LaMnO 3 films.
URI: http://hdl.handle.net/10397/23377
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2011.12.099
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