Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/23145
Title: Interdiffusion of GaInNAs/GaAs quantum wells
Authors: Chan, MCY
Surya, C 
Wai, PKA 
Keywords: GaInNAs/GaAs
Interdiffusion
Laser
Optical gain
Quantum well
Semiconductor
Issue Date: 2001
Source: Proceedings of the IEEE Hong Kong Electron Devices Meeting, 2001, p. 17-20 How to cite?
Abstract: The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.
Description: 2001 IEEE Hong Kong Electron Devices Meeting, Hong Kong, 30 June 2001
URI: http://hdl.handle.net/10397/23145
DOI: 10.1109/HKEDM.2001.946909
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