Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/23043
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorTian, HY-
dc.creatorWang, DY-
dc.creatorZhou, XY-
dc.creatorWang, Y-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-19T07:01:47Z-
dc.date.available2014-12-19T07:01:47Z-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/10397/23043-
dc.language.isoenen_US
dc.publisherWiley-VCHen_US
dc.titleLarge quasi-linear electro-optical response of BaZr 0.75Hf 0.25O 3 thin films by pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spageR63-
dc.identifier.epageR65-
dc.identifier.volume202-
dc.identifier.issue6-
dc.identifier.doi10.1002/pssa.200510017-
dcterms.abstractEpitaxial BaZr 0.75Hf 0.25O 3 (BZH) thin films were grown successfully on MgO (100) substrates by pulsed laser deposition. The FWHM of the rocking curve of the BZH thin film deposited at 650°C is about 0.6°, and the pole-figure shows that the BZH thin film has fourfold symmetry with 0.5-1.1° FWHM in the φ-scanning. A large quasi-linear electro-optic effect was observed under an external electric field in a transverse geometry at 633 nm. The electric-optic coefficient R c and birefringence shift are found to be 9.145 × 10 -11 m/V and 4 × 10 -3 at 10 kV/mm, respectively. The microstructure of the films and its relation to the observed electric-optic properties is discussed. It is expected that BZH thin films will have various electric-optic and microwave applications.-
dcterms.bibliographicCitationPhysica status solidi. A, Applications and materials science, 2005, v. 202, no. 6, p. R63-R65-
dcterms.isPartOfPhysica status solidi. A, Applications and materials science-
dcterms.issued2005-
dc.identifier.isiWOS:000229345700003-
dc.identifier.scopus2-s2.0-25444528727-
dc.identifier.eissn1862-6319-
dc.identifier.rosgroupidr24967-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
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