Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22977
Title: Ferroelectric and pyroelectric properties of highly (111)-oriented nanocrystalline Pb(Zr0.95Ti0.05)O3 thin films
Authors: Liu, QX
Tang, XG
Jiang, YP
Chan, HLW 
Keywords: Antiferroelectric
Ferroelectric property
Pyroelectric coefficient
PZT95/5 film
Sol-gel
Issue Date: 2007
Publisher: 中国物理学会
Source: 化学物理学报 (Chinese journal of chemical physics) , 2007, v. 20, no. 6, p. 763-767 How to cite?
Journal: 化学物理学报 (Chinese journal of chemical physics) 
Abstract: Lead zirconate titanate Pb(Zr0.95Ti0.05)O3 (PZT95/5) antiferroelectric thin films with 300 nm thickness were grown on Pt/Ti/SiO2/Si substrates by a sol-gel method with rapid thermal annealing processing. The X-ray diffraction results showed that the highly (111)-oriented pervoskite PZT95/5 thin films were grown on Pt/Ti/SiO 2/Si substrates when annealed at 600-700°C. Electrical measurements were conducted on PZT95/5 films in metal-ferroelectric-metal capacitor configuration. The PZT95/5 thin films annealed at 600-700°C showed well-saturated hysteresis loops at an applied voltage of 20 V. At 1 kHz, the dielectric constant and dielectric loss of the films were 519 and 0.028, 677 and 0.029, 987 and 0.025, respectively for the thin films annealed at 600, 650, and 700°C. The average remanent polarization (Pr) and the coercive electric field (Ec) obtained from the P-E hysteresis loops, were 19.1 μC/cm2 and 135.6 kV/cm, 29.3μC/cm2 and 88.57 kV/cm, 45.3 μC/cm2 and 102.1 kV/cm, respectively for PZT95/5 thin films annealed at 600, 650 and 700°C for 10 min in the oxygen atmosphere. This showed a good ferroelectricity of the prepared PZT95/5 films on Pt/Ti/SiO 2/Si substrates by the simple sol-gel processing. The pyroelectric coefficient (p) of antiferroelectric PZT95/5 films was measured by a dynamic technique. At room temperature, the p values of the antiferroelectric PZT95/5 films at 1 kHz were 274, 238, and 212 μC/m2K.
URI: http://hdl.handle.net/10397/22977
ISSN: 1003-7713
EISSN: 1674-0068
DOI: 10.1088/1674-0068/20/06/763-767
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