Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22911
Title: Structural and electrical properties of excess PbO doped Pb(Zr 0.48Ti0.52)O3 thin films prepared by a MOD process
Authors: Song, Z
Fu, X
Lin, C
Chan, HLW 
Choy, CL 
Keywords: Excess Pb
Fatigue rate
MOD process
Pinning centres
PZT film
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 260, no. 1, p. 169-174 How to cite?
Journal: Ferroelectrics 
Abstract: Pb(Zr0.52Ti 0.48)O3 thin films with 30 mol % excess Pb were deposited on Pt/Ti/SiO2/Si(100) substrates at 600 °C by a metal-organic decomposition process. The Pb/Zr ratio measured by Rutherford backscattering spectroscopy is higher than the stiochiometric ratio. X-ray diffraction measurements show that the PZT film has a perovskite structure but it also contains a PbO2 phase High resolution transmission electron microscope studies reveal that the nano sized PbO2 crystals are dispersed quite uniformly in the film. The film exhibits an abnormally slim polarization loop at low applied electric field probably as a result of domain pinning by the PbO2 crystals. The pinning effect can be overcome by applying a sufficiently high field. The film had good fatigue properties even with the presence of the PbO2 crystals.
URI: http://hdl.handle.net/10397/22911
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108016012
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