Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22774
Title: Ba0.5Sr0.5TiO3 thin film based ring resonators
Authors: Cheng, YL
Wang, Y 
Chan, HLW 
Keywords: Relative permittivity
Resonance
Ring resonator
Scattering parameters
Issue Date: 2005
Source: Integrated ferroelectrics, 2005, v. 70, p. 151-157 How to cite?
Journal: Integrated Ferroelectrics 
Abstract: In this work, Ba0.5Sr0.5TiO3 thin films were deposited on a LAO substrate by rf magnetron sputtering followed by thermal annealing. XRD spectra revealed good crystallization of the film. The ring resonator electrode pattern consists of feed lines, coupling gaps and the resonator has been deposited by sputtering and patterned by a standard photolithography and wet etching technique. The microwave testing of the device was performed using a network analyzer with a pair of microprobes. The ring resonators were characterized by measuring the scattering parameters in the frequency range of 50 MHz to 20 GHz. It was found that the resonance occurs when the mean circumference of the ring resonator is equal to an integral multiple of the guided wavelength. A commercial electromagnetic simulator, IE3D was used to simulate the S21 spectra and fitted to the experimental results to obtain the relative permittivity of the BST film. Also, it was observed that the resonant frequency shifted when the film thickness was varied. The mechanism responsible for this dielectric behavior has been discussed.
URI: http://hdl.handle.net/10397/22774
ISSN: 1058-4587
DOI: 10.1080/10584580490895770
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