Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22626
Title: Heteroepitaxial growth of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films for integrated devices
Authors: Cheung, HY
Hau, FF
Wang, J
Wong, KH
Keywords: Ferroelectrics
PLD
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 260, no. 1, p. 219-224 How to cite?
Journal: Ferroelectrics 
Abstract: 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) relaxor ferroelectric thin films have been grown on MgO single crystal and MgO/TiN buffered Si by pulsed laser deposition method. Structural characterization is performed by four-circle mode X-ray diffractometry. The effects of substrate temperature, deposition ambient oxygen pressure and postannealing on the crystallinity of the PMN-PT films are studied in details. Optimum condition for fabricating high structural quality and pyrochlore-free PMN-PT films is identified. Electrical measurements on the epitaxial PMN-PT films are performed with lattice matched conducting LaSrMnO3 (LSMO) bottom electrode and Au top electrode. Heteroepitaxial relationship of PMN-PT(100)
LSMO(100)
MgO(100) and PMN-PT(100)
LSMO(100)
MgO(100)
TiN(100)
Si(100) are obtained. The potential uses of PMN-PT films in integrated devices are discussed.
URI: http://hdl.handle.net/10397/22626
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108016020
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